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| 2SA2070 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching Applications DC-DC Converter Applications * * * High DC current gain: hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) High-speed switching: tf = 70 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating -50 -50 -7 -1.0 -2.0 -0.1 1.0 2.0 150 -55 to 150 Unit V V V A A W C C JEDEC JEITA TOSHIBA SC-62 2-5K1A Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Weight: 0.05 g (typ.) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = -50 V, IE = 0 VEB = -7 V, IC = 0 IC = -10 mA, IB = 0 VCE = -2 V, IC = -0.1 A VCE = -2 V, IC = -0.3 A IC = -0.3 A, IB = -0.01 mA IC = -0.3 A, IB = -0.01 mA VCB = -10 V, IE = 0, f = 1 MHz See Figure 1 circuit diagram. VCC -30 V, RL = 100 IB1 = -IB2 = -10 mA Min -50 200 125 Typ. 8 60 280 70 Max -100 -100 500 -0.20 -1.10 ns V V pF Unit nA nA V 1 2002-07-22 2SA2070 Marking 20 ms IB2 IB1 Input IB1 VCC RL 4C Output IB2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart 2 2002-07-22 2SA2070 IC - VCE -1 -100 -50 -40 -30 -20 -15 -0.6 -10 -5 -0.4 -2 IB = -1mA -0.2 Common emitter Ta = 25C Single nonrepetitive pulse -0.6 -0.8 -1 -1.2 5000 hFE - IC 3000 Common emitter VCE = -2 V Single nonrepetitive pulse (A) -0.8 hFE 1000 Ta = 100C 300 25 -55 IC Collector current DC current gain 100 30 -0 0 0 -0.2 -0.4 10 -0.001 -0.003 -0.01 -0.03 -0. 1 -0.3 -1 Collector-emitter voltage VCE (V) Collector current IC (A) VCE (sat) - IC -5 -10 -3 Common emitter IC/IB = 30 Single nonrepetitive pulse -1 VBE (sat) - IC Common emitter IC/IB = 30 Single nonrepetitive pulse -55 -1 Ta = 100C 25 Collector-emitter saturation voltage VCE (sat) (V) Base-emitter saturation voltage VBE (sat) (V) -55 -3 -0.3 -0.3 -0.1 Ta = 100C -0.1 -0.03 25 -0.01 -0.001 -0.003 -0.01 -0.03 -0.03 -0.001 -0. 1 -0.3 -1 -0.003 -0.01 -0.03 -0.1 -0.3 -1 Collector current Collector current IC (A) IC (A) IC - VBE -1 Common emitter VCE = -2 V Single nonrepetitive pulse IC Collector current (A) -0.8 -0.6 -0.4 Ta = 100C -0.2 25 -55 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Base-emitter voltage VBE (V) 3 2002-07-22 2SA2070 rth - tw 1000 Transient thermal resistance rth (j-a) (C/W) 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse 1 0.001 Ta = 25C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe Operating Area -10 (A) -3 IC max (pulsed)* IC max (continuous) DC operation (Ta = 25C) 10 ms* 1 ms* 100 ms* 10 s* 10 ms* Collector current IC -1 -0.3 100 ms* *: Single nonrepetitive pulse Ta = 25C -0.1 Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren't mounted on an FR4 board (glass -0.03 epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. -0.01 -0.1 -0.3 -1 -3 -10 -30 Collector-emitter voltage VCE (V) VCEO max -100 4 2002-07-22 2SA2070 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2002-07-22 This datasheet has been download from: www..com Datasheets for electronics components. |
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